RT8509

4

DS8509-01 March 2012

www.richtek.com

©

Copyright 2012 Richtek Technology Corporation. All rights reserved.

is a registered trademark of Richtek Technology Corporation.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Transconductance

gm

--

100

--

μA/V

Voltage Gain

FB to COMP

--

700

--

V/V

N-MOSFET

Current Limit

3

3.5

--

A

On-Resistance

--

100

250

m

Ω

Leakage Current

--

30

45

μA

Current Sense

Transresistance

--

0.25

--

V/A

Soft-Start

Charge Current

--

5

--

μA

Control Inputs

Logic-High

1.5

--

--

EN Input

Voltage

Logic-Low

--

--

0.5

V

Note 1.

Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are

stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in

the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may

affect device reliability.

Note 2.

measured at the exposed pad of the package.

Note 3.

Devices are ESD sensitive. Handling precaution is recommended.

Note 4.

The device is not guaranteed to function outside its operating conditions.