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IRF3315S Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # IRF3315S
Description  Isc N-Channel MOSFET Transistor
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF3315S Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
Isc N-Channel MOSFET Transistor
IRF3315S
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA
150
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
2.0
4.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=12A
82
mΩ
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS=0V
±
0.1
μ
A
IDSS
Drain-Source Leakage Current
VDS=150V; VGS= 0V;Tj=25℃
VDS=120V; VGS= 0V;Tj=150℃
25
250
μ
A
VSDF
Diode forward voltage
ISD=21A, VGS = 0 V
1.3
V


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