1 / 6 page
Absolute Maximum Ratings ( T
J = 25°C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
VDRM
Repetitive Peak Off-State Voltage
600
V
IT(RMS)
R.M.S On-State Current
TC = 99 °C
4.0
A
ITSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
30/33
A
I2t
I2t
4.5
A2s
PGM
Peak Gate Power Dissipation
1.5
W
PG(AV)
Average Gate Power Dissipation
0.1
W
IGM
Peak Gate Current
1.0
A
VGM
Peak Gate Voltage
7.0
V
TJ
Operating Junction Temperature
- 40 ~ 125
°C
TSTG
Storage Temperature
- 40 ~ 150
°C
Mass
2.0
g
Bi-Directional Triode Thyristor
Features
◆
Repetitive Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( IT(RMS)= 4 A )
◆
High Commutation dv/dt
General Description
This device is suitable for direct coupling to TTL, HTL, CMOS
and application such as various logic functions, low power
AC switching applications, such as fan speed, small light
controllers and home appliance equipment.
2.T2
3.Gate
1.T1
Symbol
○
○
○
▼▲
1/6
STF4A60
SemiWell Semiconductor
TO-220F
1
2
3
UL : E228720
Aug, 2003. Rev. 1
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
