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ZXSC410E6TA Datasheet(PDF) 3 Page - Diodes Incorporated |
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ZXSC410E6TA Datasheet(HTML) 3 Page - Diodes Incorporated |
3 / 17 page ![]() ZXSC410/ZXSC420/ZXSC440 Document number: DS33618 Rev. 6 - 2 3 of 17 www.diodes.com August 2015 © Diodes Incorporated ZXSC410/ZXSC420/ZXSC440 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Parameter Rating Unit VCC -0.3 to +10 V Drive -0.3 to VCC +0.3 V EOR -0.3 to VCC +0.3 V STDN -0.3 to The lower of (+5.0) or (VCC +0.3) V VFB, Sense -0.3 to The lower of (+5.0) or (VCC +0.3) V Operating Temperature -40 to +85 °C Storage Temperature -55 to +120 °C Power Dissipation @ +25°C 450 mW Caution: Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices. Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Symbol Parameter Min Max Unit VCC VCC Range 1.8 8 V TA Ambient Temperature Range -40 +85 °C VIH Shutdown Threshold 1.5 VCC V VIL Shutdown Threshold 0 0.55 V Electrical Characteristics (VCC = 3V, @TA = +40°C to +85°C, unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Unit IQ (Note 4) Quiescent Current VCC = 8V - - 220 µA ISTDN Shutdown Current - - 4.5 - µA EFF (Note 5) Efficiency 50mA > IOUT > 300mA - 85 - % ACCREF Reference Tolerance 1.8V < VCC < 8V -3.0 - +3.0 % TCOREF Reference Temp Co. - - 0.005 - %/°C TDRV Discharge Pulse Width 1.8V < VCC < 8V - 1.7 - µs FOSC Operating Frequency - - - 200 kHz Input Parameters VSENSE Sense Voltage (Note 5) - 22 28 34 mV ISENSE Sense Input Current VFB = 0V; VSENSE = 0V -1 -7 -15 µA VFB Feedback Voltage TA = +25°C 291 300 309 mV IFB (Note 6) Feedback Input Current VFB = 0V; VSENSE = 0V -1.2 - -4.5 µA dVLN Line Voltage Regulation - - 0.5 - %/V Output Parameters IOUT (Note 7) Output Current VIN > 2V, VOUT = VIN 300 - - mA IDRIVE Transistor Drive Current VDRIVE = 0.7V 2 3.4 5 mA VDRIVE Transistor Voltage Drive 1.8V < VCC < 8V 0 - VCC -0.4 V CDRIVE MOSFET Gate Drive cpbty - - 300 - pF VOHEOR EOR Flag Output High IEOR = -300nA 2.5 - VCC V VOLEOR EOR Flag Output Low IEOR = 1mA 0 - 1.15 V TEOR EOR Delay Time TA = +25°C 70 195 250 µs dILD Load Current Regulation - - - 0.01 %/mA Notes: 4. Excluding gate/base drive current. 5. Effective sense voltage observed when switching at approximately 100kHz. The internal comparator propagation delay of approximately 1µs causes an increase in the effective sense voltage over a DC measurement of the sense voltage. 6. IFB is typically half of these values at 3V. 7. System not device specification, including recommended transistors. |
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