ZXSC410/ZXSC420/ZXSC440

Document number: DS33618 Rev. 6 - 2

3 of 17

www.diodes.com

August 2015

© Diodes Incorporated

ZXSC410/ZXSC420/ZXSC440

Parameter

Rating

Unit

-0.3 to +10

V

Drive

V

EOR

V

STDN

V

V

Operating Temperature

-40 to +85

°C

Storage Temperature

-55 to +120

°C

Power Dissipation @ +25°C

450

mW

Caution:

Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may

be affected by exposure to absolute maximum rating conditions for extended periods of time.

Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when

handling and transporting these devices.

Symbol

Parameter

Min

Max

Unit

1.8

8

V

Ambient Temperature Range

-40

+85

°C

Shutdown Threshold

1.5

V

Shutdown Threshold

0

0.55

V

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Quiescent Current

-

-

220

µA

Shutdown Current

-

-

4.5

-

µA

Efficiency

-

85

-

%

Reference Tolerance

-3.0

-

+3.0

%

Reference Temp Co.

-

-

0.005

-

%/°C

Discharge Pulse Width

-

1.7

-

µs

Operating Frequency

-

-

-

200

kHz

Input Parameters

Sense Voltage (Note 5)

-

22

28

34

mV

Sense Input Current

-1

-7

-15

µA

Feedback Voltage

291

300

309

mV

Feedback Input Current

-1.2

-

-4.5

µA

Line Voltage Regulation

-

-

0.5

-

%/V

Output Parameters

Output Current

300

-

-

mA

Transistor Drive Current

2

3.4

5

mA

Transistor Voltage Drive

0

-

V

MOSFET Gate Drive cpbty

-

-

300

-

pF

EOR Flag Output High

2.5

-

V

EOR Flag Output Low

0

-

1.15

V

EOR Delay Time

70

195

250

µs

Load Current Regulation

-

-

-

0.01

%/mA

Notes:

4. Excluding gate/base drive current.

5. Effective sense voltage observed when switching at approximately 100kHz. The internal comparator propagation delay of approximately 1µs causes an

increase in the effective sense voltage over a DC measurement of the sense voltage.

7. System not device specification, including recommended transistors.