
3236 Scott Boulevard
Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
CFK2162-P5
Features
t High Gain
t +34 dBm Power Output
t Proprietary Power FET Process
t >45% Linear Power Added Efficiency
t +29 dBm with 30 dBc Third Order Products
t Surface Mount SO-8 Power Package
Applications
t ISM Band Base Stations and Terminals
t PCS/PCN Base Stations and Terminals
t Wireless Local Loop
Description
The CFK2162-P5 is a high-gain FET intended for dri-
ver amplifier applications in high-power systems, and output
stage usage in medium power applications at power levels up to
+34 dBm. The device is easily matched and provides excellent
linearity at 2 Watts. Manufactured in Celeritek’s proprietary
power FET process, this device is assembled in an industry
standard surface mount SO-8 power package that is compatible
with high volume, automated board assembly techniques.
2.3 to 2.5 GHz
+34 dBm Power GaAs FET
Product Specifications
July 1997
(1 of 4)
1
3
4
7
8
6
5
2
G
G
D
D
Back Plane
is Source
GND
GND
GND
GND
Package Diagram
Notes:
1. Sum to two tones with 1 MHz spacing = 29 dBm.
2. See thermal considerations information on page 4.
3. Max (+Vd) and (-Vg) under linear operation. Max potential difference
across the device in RF compression (2Vd + |-Vg|) not to exceed the mini-
mum breakdown voltage (Vbr) of +18V.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
12V (3)
Gate-Source Voltage
VGS
-5V
Drain Current
IDS
Idss
Continuous Dissipation
PT
10W
Channel Temperature
TCH
175°C
Storage Temperature
TSTG
-65°C to +175°C
Parameters
Conditions
Min
Typ
Max
Units
Vd = 8V, Id = 800 mA (Quiescent)
P-1dB
33.0 34.0
—
dBm
SSG
11.0 12.0
—
dB
3rd Order
Products (1)
26
30
—
dBc
Efficiency
@ P1dB
—
40
—
%
Vd = 5V, Id = 350 mA (Quiescent)
P-1dB
—
30.0
—
dBm
SSG
—
9.0
—
dB
Vd = 5V, Id = 1200 mA (Quiescent)
P-1dB
—
32.5
—
dBm
SSG
—
10.0
—
dB
Specifications (TA = 25°C) The following specifications are
guaranteed at room temperature in Celeritek test fixture at 2.5 GHz.
Parameters
Conditions
Min
Typ
Max
Units
gm
Vds = 2.0V, Vgs = 0V
—
1700
—
mS
Idss
Vds = 2.0V, Vgs = 0V
—
2.8
—
A
Vp
Vds = 3.0V, Ids = 65 mA
—
-1.8
Volts
BVGD (3)
Igd = 6.5 mA
18
20
—
Volts
Θ
JL (2)
@150°C TCH
—
10
—
°C/W
SO-8 Power Package Physical Dimensions