IDT70V659/58/57S

High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM

Industrial and Commercial Temperature Ranges

8

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS

may cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions above

those indicated in the operational sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may

affect reliability.

+ 150mV.

3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.

Symbol

Rating

Commercial

& Industrial

Unit

with Respect to GND

-0.5 to + 4.6

V

Temperature Under Bias

-55 to +125

o

C

Storage Temperature

-65 to +150

o

C

Junction Temperature

+150

o

C

50

mA

40

mA

4869 tbl 05

Recommended DC Operating

NOTES:

3. To select operation at 3.3V levels on the I/Os and controls of a given port, the

supplied as indicated above.

Symbol

Parameter

Min.

Typ.

Max.

Unit

Core Supply Voltage

3.15

3.3

3.45

V

3.15

3.3

3.45

V

Ground

0

0

0

V

Input High Voltage

2.0

____

V

2.0

____

V

Input Low Voltage

____

0.8

V

4869 tbl 07

Recommended DC Operating

NOTES:

3. To select operation at 2.5V levels on the I/Os and controls of a given port, the

supplied as indicated above.

Symbol

Parameter

Min. Typ.

Max.

Unit

Core Supply Voltage

3.15

3.3

3.45

V

2.4

2.5

2.6

V

Ground

0

0

0

V

(Address & Control Inputs)

1.7

____

V

1.7

____

V

Input Low Voltage

____

0.7

V

4869 tbl 06

Maximum Operating

NOTE:

1. This is the parameter TA. This is the "instant on" case temperature.

Grade

Ambient

Temperature

GND

Commercial

3.3V

Industrial

3.3V

4869 tbl 04

NOTES:

1. These parameters are determined by device characterization, but are not

production tested.

Symbol

Parameter

Conditions

Max.

Unit

Input Capacitance

8

pF

Output Capacitance

10.5

pF

4869 tbl 08