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IDT7005S Datasheet(PDF) 8 Page - Integrated Device Technology |
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IDT7005S Datasheet(HTML) 8 Page - Integrated Device Technology |
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8 / 21 page  6.42 IDT7005S/L High-Speed 8K x 8 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges 8 tRC R/ W CE ADDR tAA (4) OE 2738 drw 07 tACE (4) tAOE (4) tLZ (1) tOH tHZ (2) tBDD (3,4) DATAOUT BUSYOUT VALID DATA (4) Waveform of Read Cycles(5) NOTES: 1. Timing depends on which signal is asserted last, OE or CE. 2. Timing depends on which signal is de-asserted first CE or OE. 3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no relation to valid output data. 4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA or tBDD. 5. SEM = VIH. Timing of Power-Up Power-Down CE 2738 drw 08 tPU ICC ISB tPD , |
Similar Part No. - IDT7005S_18 |
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Similar Description - IDT7005S_18 |
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