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IDT70V05S Datasheet(PDF) 11 Page - Integrated Device Technology |
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IDT70V05S Datasheet(HTML) 11 Page - Integrated Device Technology |
11 / 23 page ![]() 6.42 IDT70V05S/L High-Speed 3.3V 8K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges 11 T im ing Wa ve for m of Writ e Cycle N o. 1 , R/W Cont rolle d T im ing(1,3,5,8) NOTES: 1. R/W or CE must be HIGH during all address transitions. 2. A write occurs during the overlap (tEW or tWP) of a LOW CE and a LOW R/W for memory array writing cycle. 3. tWR is measured from the earlier of CE or R/W (or SEM or R/W) going HIGH to the end of write cycle. 4. During this period, the I/O pins are in the output state and input signals must not be applied. 5. If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state. 6. Timing depends on which enable signal is asserted last, CE, or R/W. 7. Timing depends on which enable signal is de-asserted first, CE, or R/W. 8. If OE is LOW during R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off and data to be placed on the bus for the required tDW. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP. 9. To access RAM, CE = VIL and SEM = VIH. To access Semaphore, CE = VIH and SEM = VIL. tEW must be met for either condition. T im ing Wa ve for m of Writ e Cycle N o. 2 , CE Cont rolle d T im ing(1,3,5,8) 2941 drw 09 tWC tAS tWR tDW tDH ADDRESS DATAIN CE or SEM R/W tAW tEW (3) (2) (6) (9) R/W tWC tHZ tAW tWR tAS tWP DATAOUT (2) tWZ tDW tDH tOW OE ADDRESS DATAIN CE (6) (4) (4) (3) 2941 drw 08 (7) (7) or SEM (9) |
Similar Part No. - IDT70V05S_18 |
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Similar Description - IDT70V05S_18 |
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