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IDT70V05S Datasheet(PDF) 5 Page - Integrated Device Technology |
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IDT70V05S Datasheet(HTML) 5 Page - Integrated Device Technology |
5 / 23 page ![]() 6.42 IDT70V05S/L High-Speed 3.3V 8K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges 5 DC Ele c t ric a l Cha ra c t e rist ic s Ove r t he Ope ra t ing Te m pe ra t ure a nd Supply Volt a ge Ra nge (VDD = 3.3V ± 0.3V) Re c om m e nde d DC Ope ra t ing Condit ions M a x im um Ope rat ing Te m pe ra t ure a nd Supply Volt a ge (1) Absolut e M a x im um Ra t ings(1) Ca pa c it a nc e (TA = +25°C, f = 1.0MH z) NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VDD + 0.3V. NOTE: 1. This is the parameter TA. This is the "instant on" case temperature. NOTES: 1. VIL> -1.5V for pulse width less than 10ns. 2. VTERM must not exceed VDD +0.3V. l o b m y Sg n it a Rl a i c r e m m o C l a i r t s u d n I & t i n U V M R E T ) 2 ( e g a tl o V l a n i m r e T t c e p s e R h ti w D N G o t 6 . 4 + o t 5 . 0 -V T S A I B e r u t a r e p m e T s a i B r e d n U 5 2 1 + o t 5 5 - oC T G T S e g a r o t S e r u t a r e p m e T 0 5 1 + o t 5 6 - oC I T U O t u p t u O C D t n e r r u C 0 5A m 4 0 l b t 1 4 9 2 e d a r Ge r u t a r e p m e T t n e i b m AD N GVDD l a i c r e m m o C0O 0 7 + o t C OCV 0V 3 . 3 + V 3 . 0 l a ir t s u d n I0 4 - O 5 8 + o t C OCV 0V 3 . 3 + V 3 . 0 5 0 l b t 1 4 9 2 l o b m y Sr e t e m a r a P. n i M. p y T. x a Mt i n U VDD e g a tl o V y l p p u S0 . 33 . 36 . 3V VSS d n u o r G0 0 0 V V H I e g a tl o V h g i H t u p n I0 . 2 _ _ _ _ VDD 3 . 0 + ) 2 ( V V LI e g a tl o V w o L t u p n I5 . 0 - ) 1 ( _ _ _ _ 8 . 0V 6 0 l b t 1 4 9 2 l o b m y Sr e t e m a r a P ) 1 ( s n o it i d n o C. x a Mt i n U C N I e c n a ti c a p a C t u p n IV N I V d 3 =9 F p C T U O e c n a ti c a p a C t u p t u OV T U O V d 3 =0 1F p 7 0 l b t 1 4 9 2 l o b m y Sr e t e m a r a Ps n o it i d n o C t s e T S 5 0 V 0 7L 5 0 V 0 7 t i n U . n i M. x a M. n i M. x a M I|LI| t n e r r u C e g a k a e L t u p n I ) 1 ( V D D V , V 6 . 3 = N I V o t V 0 = D D _ _ _ 0 1 _ _ _ 5A µ I| O L | t n e r r u C e g a k a e L t u p t u OV T U O V o t V 0 = D D _ _ _ 0 1 _ _ _ 5A µ V L O e g a tl o V w o L t u p t u OI L O A m 4 + = _ _ _ 4 . 0 _ _ _ 4 . 0V V H O e g a tl o V h g i H t u p t u OI H O A m 4 - =4 . 2 _ _ _ 4 . 2 _ _ _ V 8 0 l b t 1 4 9 2 NOTES: 1. This parameter is determined by device characterization but is not production tested. 2. 3dV references the interpolated capacitznce when the input and output signals switch from 0V to 3V or from 3V to 0V. NOTE: 1. At VDD < 2.0V input leakages are undefined. |
Similar Part No. - IDT70V05S_18 |
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Similar Description - IDT70V05S_18 |
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