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IXTT2N170D2 Datasheet(PDF) 5 Page - IXYS Corporation

Part # IXTT2N170D2
Description  Depletion Mode MOSFET
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTT2N170D2 Datasheet(HTML) 5 Page - IXYS Corporation

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© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_2N170D2(7N) 3-29-17
IXTT2N170D2
IXTH2N170D2
Fig. 17. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
Fig. 16. Maximum Transient Thermal Impedance
hv j v
0.4
Fig. 13. Forward Voltage Drop of Intrinsic Diode
0
1
2
3
4
5
6
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VSD - Volts
TJ = 125
oC
VGS = -10V
TJ = 25
oC
Fig. 15. Gate Charge
-5
-4
-3
-2
-1
0
1
2
3
4
5
0
20
40
60
80
100
120
QG - NanoCoulombs
VDS = 850V
I D = 1A
I G = 10mA
Fig. 14. Capacitance
10
100
1,000
10,000
0
5
10
15
20
25
30
35
40
VDS - Volts
f = 1 MHz
Ciss
Crss
Coss
Fig. 17. Forward-Bias Safe Operating Area
@ TC = 25
oC
0.1
1
10
10
100
1,000
10,000
VDS - Volts
1ms
100μs
RDS(on) Limit
10ms
100ms
DC
TJ = 150
oC
TC = 25
oC
Single Pulse
Fig. 18. Forward-Bias Safe Operating Area
@ TC = 75
oC
0.1
1
10
10
100
1,000
10,000
VDS - Volts
TJ = 150
oC
TC = 75
oC
Single Pulse
25μs
1ms
100μs
RDS(on) Limit
10ms
100ms
DC


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