• HIGH OUTPUT FREQUENCY:

• SUPPLY VOLTAGE:

• HIGH IP3 AND CONVERSION GAIN:

• HIGH-DENSITY SURFACE MOUNTING:

6-pin super minimold package

FEATURES

SILICON RFIC

FOR WIRELESS TRANSCEIVER

UPC8187TB

APPLICATIONS

• TDMA, PCS, CDMA

• Digital Cellular/Cordless Phones

• Wireless Tranceivers

PART NUMBER

UPC8187TB

PACKAGE OUTLINE

S06

SYMBOLS

UNITS

MIN

TYP

MAX

Circuit Current (no signal)

mA

11

15

19

CG1

dB

8

11

14

CG2

dB

8

11

14

CG3

dB

7

10

13

dBm

+1.5

+4

–

dBm

0

+2.5

–

dBm

-1.5

+1

–

Output Third-Order Distortion Intercept Point,

dBm

–

10

–

dBm

–

10

–

dBm

–

8.5

–

Input Third-Order Distortion Intercept Point,

dBm

–

-1.0

–

dBm

–

-1.0

–

dBm

–

-1.5

–

SSB•NF1

dB

–

11

–

SSB•NF2

SSB Noise Figure,

dB

–

12

–

SSB•NF3

dB

–

12.5

–

ELECTRICAL CHARACTERISTICS

California Eastern Laboratories

Note:

1.

DESCRIPTION

The UPC8187TB is a silicon monolithic integrated circuit

designed as a frequency up-converter for wireless transceiv-

ers. This IC has higher operating frequency, lower distortion

and higher conversion gain than the conventional UPC8163TB.

(Ultra High Speed Process) silicon bipolar process.

NEC's stringent quality assurance and test procedures ensure

the highest reliability and performance.

(Top View)

LO input

GND

IF input

GND

RF output

BLOCK DIGRAM