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AP2030M Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers |
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AP2030M Datasheet(HTML) 3 Page - List of Unclassifed Manufacturers |
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3 / 11 page  AP2030M P-CH Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA -20 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.037 -V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=-4.5V, ID=-2.2A - - 50 mΩ VGS=-2.5V, ID=-1.8A - - 80 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - -1 V gfs Forward Transconductance VDS=-10V, ID=-2.2A - 2.5 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70 oC) VDS=-16V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS=- - nA Qg Total Gate Charge 2 ID=-2.2A - 11.5 - nC Qgs Gate-Source Charge VDS=-6V - 3.2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 1.5 - nC td(on) Turn-on Delay Time 2 VDS=-10V - 10 - ns tr Rise Time ID=-2.2A - 25 - ns td(off) Turn-off Delay Time RG=6Ω,VGS=-4.5V - 50 - ns tf Fall Time RD=4.5Ω -30 - ns Ciss Input Capacitance VGS=0V - 940 - pF Coss Output Capacitance VDS=-15V - 440 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -1.67 A VSD Forward On Voltage 2 Tj=25℃, IS=-1.8A, VGS=0V - - -1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in 2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad. ± 8V ±100 |
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