STD20N20 datasheet(3/13 Pages) STMICROELECTRONICS

Part #	STD20N20

Description	N-CHANNEL 200V - 0.10 OHM - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STP20N20 - STF20N20 - STD20N20

ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 7: Dynamic

Table 8: Source Drain Diode

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(2) Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS = 25 V, ID= 10 A

13

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

940

197

30

pF

td(on)

tr

td(off)

tr

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD = 100 V, ID = 10 A,

RG= 4.7 Ω VGS = 10 V

(see Figure 17)

15

30

40

10

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 160V, ID = 20 A,

VGS = 10V

(see Figure 20)

28

5.6

14.5

39

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

18

72

A

VSD (1)

Forward On Voltage

ISD = 20 A, VGS = 0

1.6

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 20 A, di/dt = 100A/µs

VDD = 50V, Tj = 25°C

(see Figure 18)

155

775

10

ns

nC

A

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 20 A, di/dt = 100A/µs

VDD = 50V, Tj = 150°C

(see Figure 18)

183

1061

11.6

ns

nC

A

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