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M29W160DB Datasheet(PDF) 1 Page - STMicroelectronics |
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M29W160DB Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 42 page ![]() 1/42 June 2002 M29W160DT M29W160DB 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE –VCC = 2.7V to 3.6V for Program, Erase and Read s ACCESS TIME: 70, 90ns s PROGRAMMING TIME –10 µs per Byte/Word typical s 35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 32 Main Blocks s PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithms s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming s TEMPORARY BLOCK UNPROTECTION MODE s COMMON FLASH INTERFACE (only available for Temperature range 6: –40 to 85 °C) – 64 bit Security Code s LOW POWER CONSUMPTION – Standby and Automatic Standby s 100,000 PROGRAM/ERASE CYCLES per BLOCK s ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W160DT: 22C4h – Bottom Device Code M29W160DB: 2249h Figure 1. Packages TSOP48 (N) 12 x 20mm TFBG A48 (ZA) 8 x 9mm FBGA SO44 (M) |
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