AFIC31025N AFIC31025GN

1

RF Device Data

NXP Semiconductors

RF LDMOS Integrated

Power Amplifiers

The AFIC31025N integrated circuit is designed with on--chip matching that

makes it usable from 2400 to 3100 MHz. This multi--stage device is designed

to support CW and pulse applications.

Frequency

(MHz)

Signal Type

(W)

(dB)

(%)

2400–2500

CW

25

30.0

45.5

2700–3100

Pulse

(300 sec, 15% Duty Cycle)

25 Peak

22.0

40.0

Features

 On--chip matching (50 ohm input, DC blocked)

 Integrated quiescent current temperature compensation with

 Integrated ESD protection

Typical Applications

 Civil S--Band radar

 Weather radar

 Maritime radar

 Industrial heating

 Data links

 Plasma generation

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

Note: Exposed backside of the package is

the source terminal for the transistor.

Quiescent Current

Quiescent Current

GND

1

2

3

4

7

8

15

9

10

11

N.C.

N.C.

GND

13

6

12

(Top View)

5

14

GND

16

17

Carrier

Peaking

1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control

Document Number: AFIC31025N

Rev. 0, 10/2017

NXP Semiconductors

Technical Data

2400–3100 MHz, 25 W PEAK, 32 V

AIRFAST RF LDMOS

INTEGRATED POWER AMPLIFIERS

AFIC31025N

AFIC31025GN

TO--270WB--17

PLASTIC

AFIC31025N

TO--270WBG--17

PLASTIC

AFIC31025GN

 2017 NXP B.V.