AFIC31025GN datasheet(4/12 Pages) NXP

Part #	AFIC31025GN

Description	RF LDMOS Integrated Power Amplifiers

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Manufacturer	NXP [NXP Semiconductors]

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RF Device Data

NXP Semiconductors

AFIC31025N AFIC31025GN

Table 5. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (1,2) (In NXP Production Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ1(A+B) =59 mA, IDQ2(A+B) = 157 mA,

Pout = 3.2 W Avg., f = 2690 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on

CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5MHz Offset.

Power Gain

Gps

30.5

31.9

34.5

dB

Power Added Efficiency

PAE

18.0

19.7

—

%

Load Mismatch (In NXP Production Test Fixture, 50 ohm system) IDQ1(A+B) =59 mA, IDQ2(A+B) = 157 mA, f = 2600 MHz

VSWR 10:1 at 32 Vdc, 36 W CW Output Power

(3 dB Input Overdrive from 25 W CW Rated Power)

No Device Degradation

Table 6. Ordering Information

Device

Tape and Reel Information

Package

AFIC31025NR1

R1 Suffix = 500 Units, 44 mm Tape Width, 13--Reel

TO--270WB--17

AFIC31025GNR1

TO--270WBG--17

1. Part internally input and output matched.

2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for

gull wing (GN) parts.

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AFIC31025GN Datasheet(PDF) 4 Page - NXP Semiconductors

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