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AFIC31025N Datasheet(PDF) 3 Page - NXP Semiconductors |
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AFIC31025N Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 12 page  AFIC31025N AFIC31025GN 3 RF Device Data NXP Semiconductors Table 5. Electrical Characteristics (TA =25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Stage 2 -- Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (VDS =65 Vdc, VGS =0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS =32 Vdc, VGS =0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS =1.0 Vdc, VDS =0 Vdc) IGSS — — 1 Adc Stage 2 -- On Characteristics Gate Threshold Voltage (1) (VDS =10 Vdc, ID =16 Adc) VGS(th) 0.8 1.2 1.6 Vdc Gate Quiescent Voltage (VDS =28 Vdc, IDQ2(A+B) = 157 mAdc) VGS(Q) — 1.9 — Vdc Fixture Gate Quiescent Voltage (VDD =28 Vdc, IDQ2(A+B) = 157 mAdc, Measured in Functional Test) VGG(Q) 4.3 5.0 5.8 Vdc Drain--Source On--Voltage (1) (VGS =10 Vdc, ID = 200 mAdc) VDS(on) 0.1 0.22 1.5 Vdc 1. Each side of device measured separately. (continued) |
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