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AFIC31025N Datasheet(PDF) 2 Page - NXP Semiconductors |
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AFIC31025N Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 12 page ![]() 2 RF Device Data NXP Semiconductors AFIC31025N AFIC31025GN Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +65 Vdc Gate--Source Voltage VGS –0.5, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C Operating Junction Temperature Range (1) TJ –40 to +225 C Input Power Pin 20 dBm Table 2. Thermal Characteristics Characteristic Symbol Value (2) Unit Thermal Resistance, Junction to Case Case Temperature 81C, DC, Total PD = 29.3 W Stage 1, 28 Vdc, PD =3.8 W Stage 2, 28 Vdc, PD = 25.5 W RJC 5.85 1.92 C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B Charge Device Model (per JESD22--C101) II Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C Table 5. Electrical Characteristics (TA =25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Stage 1 -- Off Characteristics (3) Zero Gate Voltage Drain Leakage Current (VDS =65 Vdc, VGS =0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS =32 Vdc, VGS =0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS =1.0 Vdc, VDS =0 Vdc) IGSS — — 1 Adc Stage 1 -- On Characteristics Gate Threshold Voltage (3) (VDS =10 Vdc, ID =2.5 Adc) VGS(th) 0.8 1.2 1.6 Vdc Gate Quiescent Voltage (VDS =28 Vdc, IDQ1(A+B) =59 mAdc) VGS(Q) — 2.0 — Vdc Fixture Gate Quiescent Voltage (VDD =28 Vdc, IDQ1(A+B) = 59 mAdc, Measured in Functional Test) VGG(Q) 4.6 5.3 6.1 Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. 3. Each side of device measured separately. (continued) |
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