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AFIC10275GN Datasheet(PDF) 8 Page - NXP Semiconductors |
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AFIC10275GN Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 22 page ![]() 8 RF Device Data Freescale Semiconductor, Inc. AFIC10275N AFIC10275GN TYPICAL CHARACTERISTICS — 1090 MHz REFERENCE CIRCUIT 0.15 Pin, INPUT POWER (WATTS) PEAK Figure 7. Power Gain, Drain Efficiency and Output Power versus Input Power 32 31 30 0 90 70 50 10 150 100 29 28 27 26 25 24 0.2 0.25 0.3 0.35 30 50 Pout 0.1 0.05 Gps 200 250 300 33 34 35 0.0 Pin, INPUT POWER (WATTS) PEAK 250 150 300 200 0.1 0.15 50 0 100 0.05 0.0 0.2 0.25 0.3 0.35 0.4 Figure 8. Output Power versus Input Power D VDD = 50 Vdc, f = 1090 MHz IDQ1 =80 mA, IDQ2 = 150 mA Pulse Width = 128 sec Duty Cycle = 10% VDD = 50 Vdc, f = 1090 MHz IDQ1 =80 mA, IDQ2 = 150 mA Pulse Width =128 sec Duty Cycle = 10% f MHz Zsource Zload 1090 36.7 -- j29 1.3 + j0.60 Zsource = Test circuit input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Figure 9. Series Equivalent Source and Load Impedance — 1090 MHz Input Matching Network Device Under Test Output Matching Network Zsource Zload 50 50 |
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