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AFIC10275N Datasheet(PDF) 9 Page - NXP Semiconductors |
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AFIC10275N Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 22 page AFIC10275N AFIC10275GN 9 RF Device Data Freescale Semiconductor, Inc. 1090 MHz NARROWBAND PRODUCTION TEST FIXTURE Table 9. 1090 MHz Narrowband Performance (1,2) (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc,IDQ1 =80 mA, IDQ2 = 150 mA, Pout = 250 W Peak (25 W Avg.), f = 1090 MHz, 128 sec Pulse Width, 10% Duty Cycle Characteristic Symbol Min Typ Max Unit Power Gain Gps 30.5 32.1 34.0 dB 2nd Stage Drain Efficiency D 57.0 61.4 — % 1. Part internally input matched. 2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. |
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