AFIC10275N AFIC10275GN

3

RF Device Data

Freescale Semiconductor, Inc.

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 1 -- Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

Adc

Zero Gate Voltage Drain Leakage Current

—

—

1

Adc

Gate--Source Leakage Current

—

—

1

Adc

Stage 1 -- On Characteristics

Gate Threshold Voltage

1.3

1.8

2.3

Vdc

Fixture Gate Quiescent Voltage

6.0

7.0

8.0

Vdc

Stage 2 -- Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

Adc

Zero Gate Voltage Drain Leakage Current

—

—

1

Adc

Gate--Source Leakage Current

—

—

1

Adc

Stage 2 -- On Characteristics

Gate Threshold Voltage

1.3

1.8

2.3

Vdc

Fixture Gate Quiescent Voltage

2.2

2.7

3.2

Vdc

Drain--Source On--Voltage

—

0.25

—

Vdc

(25 W Avg.), f = 1090 MHz, 128 sec Pulse Width, 10% Duty Cycle

Power Gain

30.5

32.1

34.0

dB

2nd Stage Drain Efficiency

57.0

61.4

—

%

Frequency

(MHz)

Signal

Type

VSWR

(W)

Result

1090

Pulse

(128 sec,

10% Duty

Cycle)

> 10:1 at all Phase Angles

0.345 W Peak

(3 dB Overdrive)

50

No Device Degradation

Table 6. Ordering Information

Device

Tape and Reel Information

Package

AFIC10275NR1

R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel

TO--270WB--14

AFIC10275GNR1

TO--270WBG--14

1. Part internally input matched.

2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing

(GN) parts.