AFIC901N datasheet(10/20 Pages) NXP

Part #	AFIC901N

Description	RF LDMOS Wideband Integrated Power Amplifier

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Manufacturer	NXP [NXP Semiconductors]

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RF Device Data

Freescale Semiconductor, Inc.

AFIC901N

TYPICAL CHARACTERISTICS — 350–520 MHz UHF BROADBAND REFERENCE CIRCUIT

1.5

VGS2, GATE--SOURCE VOLTAGE (VOLTS)

DETAIL A

2.5

2.0

0.25

0.5

0

Pin =3 dBm

VDD =7.5 V, IDQ1 =10mA,f=435 MHz

1.0

2

1.5

VGS2, GATE--SOURCE VOLTAGE (VOLTS)

Figure 9. Output Power versus Gate--Source Voltage, 2nd Stage

4.0

3.5

3.0

2.5

2.0

0.5

2.5

1

0

VDD =7.5 V, IDQ1 =10mA,f=435 MHz

Pin =0 dBm

Pin =3 dBm

Pin =0 dBm

Detail A

FREQUENCY (MHz)

23

340

29

30

28

70

60

50

40

29

26

24

32

80

31

27

25

33

32

31

30

Figure 10. Power Gain, Drain Efficiency and Output Power

versus Frequency at a Constant Input Power

D

Gps

Pout

VDD =7.5 V, Pin =3.0 dBm, lDQ1 =10 mA, lDQ2 =30 mA

360

380 400 420 440

460

480 500 520

540

D

Pin, INPUT POWER (dBm)

24

34

--8

18

30

–6

31

29

10

32

30

28

30

27

25

–4

33

20

–2

4

32

28

26

02

26

24

22

20

VDD =7.5 Vdc, lDQ1 =10 mA, lDQ2 =30 mA

Figure 11. Power Gain, Drain Efficiency and Output Power

versus Input Power and Frequency

21

23

22

40

50

60

Gps

Pout

36

35

68

70

80

520 MHz

435 MHz

350 MHz

520 MHz

435 MHz

350 MHz

520 MHz

350 MHz

435 MHz

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