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AFIC901N Datasheet(PDF) 1 Page - NXP Semiconductors |
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AFIC901N Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 20 page AFIC901N 1 RF Device Data Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifier The AFIC901N is a 2--stage, high gain amplifier designed to provide a high level of flexibility to the amplifier designer. The device is unmatched even at the interstage, allowing performance to be optimized for any frequency in the 1.8 to 1000 MHz range. The high gain, ruggedness and wideband performance of this device make it ideal for use as a pre--driver and driver in a wide range of industrial, medical and communications applications. Typical Narrowband Performance (7.5 Vdc, TA =25C, CW) Frequency (MHz) Gps (dB) D (%) Pout (dBm) 520 (1) 32.2 73.0 31.2 Typical Wideband Performance (7.5 Vdc, TA =25C, CW) Frequency (MHz) Pin (dBm) Gps (dB) D (%) Pout (dBm) 136–174 (2,5) 0 30.6 62.1 30.6 350–520 (3,5) 3 27.4 61.5 30.4 760–870 (4,5) 3 27.6 57.0 30.6 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin (W) Test Voltage Result 175 (2) CW > 25:1 at all Phase Angles 3dB Overdrive from rated power 9 No Device Degradation 520 (3) 1. Measured in 520 MHz narrowband test circuit. 2. Measured in 136–174 MHz VHF broadband reference circuit. 3. Measured in 350–520 MHz UHF broadband reference circuit. 4. Measured in 760–870 MHz broadband reference circuit. 5. The values shown are the center band performance numbers across the indicated frequency range. Features Characterized for Operation from 1.8 to 1000 MHz Unmatched Input, Interstage and Output Allowing Wide Frequency Range Utilization Integrated ESD Protection Same PCB Layout Can be Used for 136--174 MHz, 350--520 MHz and 760–870 MHz Designs. 24--pin, 4 mm QFN Plastic Package Typical Applications Driver for Mobile Radio Power Amplifiers Output Stage for Low Power Handheld Radios Driver for Communications and Industrial Systems Document Number: AFIC901N Rev. 0, 1/2016 Freescale Semiconductor Technical Data 1.8–1000 MHz, 30 dBm, 7.5 V AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER AFIC901N QFN 4 4 Figure 1. Pin Connections Note: Exposed backside of the package is the source terminal for the transistors. RFin RFout External Interstage Match Figure 2. Typical Application GND GND 24 23 1 2 3 4 5 6 GND N.C. Drain B GND N.C. Gate B Drain B Drain B Gate B Gate B 22 21 20 19 7 8 9 10 11 12 18 17 16 15 14 13 Stage 1 Stage 2 Stage 2 Stage 1 Freescale Semiconductor, Inc., 2016. All rights reserved. |
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