AFIC901N datasheet(3/20 Pages) NXP

Part #	AFIC901N

Description	RF LDMOS Wideband Integrated Power Amplifier

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Manufacturer	NXP [NXP Semiconductors]

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AFIC901N

3

RF Device Data

Freescale Semiconductor, Inc.

Table 5. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 1 -- Off Characteristics (1)

Zero Gate Voltage Drain Leakage Current

(VDS =30 Vdc, VGS =0 Vdc)

IDSS

—

1

Adc

Drain--Source Breakdown Voltage

(VGS =0 Vdc, ID =1 Adc)

V(BR)DSS

30

37

—

Vdc

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

500

nAdc

Stage 1 -- On Characteristics (1)

Gate Threshold Voltage

(VDS =10 Vdc, ID =6 Adc)

VGS(th)

1.8

2.2

2.6

Vdc

Drain--Source On--Voltage

(VGS =10 Vdc, ID =46 mAdc)

VDS(on)

—

0.24

—

Vdc

Forward Transconductance

(VDS =7.5 Vdc, ID =0.1 Adc)

gfs

—

0.096

—

S

Stage 2 -- Off Characteristics (1)

Zero Gate Voltage Drain Leakage Current

(VDS =30 Vdc, VGS =0 Vdc)

IDSS

—

1

Adc

Drain--Source Breakdown Voltage

(VGS =0 Vdc, ID =1 Adc)

V(BR)DSS

30

37

—

Vdc

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

500

nAdc

Stage 2 -- On Characteristics (1)

Gate Threshold Voltage

(VDS =10 Vdc, ID =25 Adc)

VGS(th)

1.7

2.1

2.5

Vdc

Drain--Source On--Voltage

(VGS =10 Vdc, ID = 380 mAdc)

VDS(on)

—

0.23

—

Vdc

Forward Transconductance

(VDS =7.5 Vdc, ID =1.1 Adc)

gfs

—

1.1

—

S

Functional Tests (In Freescale Narrowband Test Fixture, 50 ohm system) VDD =7.5 Vdc, IDQ1 =8 mA, IDQ2 =24 mA,

Pin = –1dBm,f= 520 MHz

Output Power

Pout

—

31.2

—

dBm

Power Gain

Gps

—

32.2

—

dB

Drain Efficiency

D

—

73.0

—

%

Table 6. Ordering Information

Device

Tape and Reel Information

Package

AFIC901NT1

T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel

QFN 4  4

1. Each side of device measured separately.

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