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AFIC901N Datasheet(PDF) 3 Page - NXP Semiconductors |
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AFIC901N Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 20 page AFIC901N 3 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA =25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Stage 1 -- Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (VDS =30 Vdc, VGS =0 Vdc) IDSS — — 1 Adc Drain--Source Breakdown Voltage (VGS =0 Vdc, ID =1 Adc) V(BR)DSS 30 37 — Vdc Gate--Source Leakage Current (VGS =5 Vdc, VDS =0 Vdc) IGSS — — 500 nAdc Stage 1 -- On Characteristics (1) Gate Threshold Voltage (VDS =10 Vdc, ID =6 Adc) VGS(th) 1.8 2.2 2.6 Vdc Drain--Source On--Voltage (VGS =10 Vdc, ID =46 mAdc) VDS(on) — 0.24 — Vdc Forward Transconductance (VDS =7.5 Vdc, ID =0.1 Adc) gfs — 0.096 — S Stage 2 -- Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (VDS =30 Vdc, VGS =0 Vdc) IDSS — — 1 Adc Drain--Source Breakdown Voltage (VGS =0 Vdc, ID =1 Adc) V(BR)DSS 30 37 — Vdc Gate--Source Leakage Current (VGS =5 Vdc, VDS =0 Vdc) IGSS — — 500 nAdc Stage 2 -- On Characteristics (1) Gate Threshold Voltage (VDS =10 Vdc, ID =25 Adc) VGS(th) 1.7 2.1 2.5 Vdc Drain--Source On--Voltage (VGS =10 Vdc, ID = 380 mAdc) VDS(on) — 0.23 — Vdc Forward Transconductance (VDS =7.5 Vdc, ID =1.1 Adc) gfs — 1.1 — S Functional Tests (In Freescale Narrowband Test Fixture, 50 ohm system) VDD =7.5 Vdc, IDQ1 =8 mA, IDQ2 =24 mA, Pin = –1dBm,f= 520 MHz Output Power Pout — 31.2 — dBm Power Gain Gps — 32.2 — dB Drain Efficiency D — 73.0 — % Table 6. Ordering Information Device Tape and Reel Information Package AFIC901NT1 T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel QFN 4 4 1. Each side of device measured separately. |
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