AFIC901N datasheet(2/20 Pages) NXP

Part #	AFIC901N

Description	RF LDMOS Wideband Integrated Power Amplifier

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Manufacturer	NXP [NXP Semiconductors]

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RF Device Data

Freescale Semiconductor, Inc.

AFIC901N

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

–0.5, +30

Vdc

Gate--Source Voltage

VGS

–6.0, +12

Vdc

Storage Temperature Range

Tstg

–65 to +150

C

Case Operating Temperature Range

TC

–40 to +150

C

Operating Junction Temperature Range (1,2)

TJ

–40 to +150

C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 78C, 30 dBm CW, 520 MHz

Stage 1, 7.5 Vdc, IDQ1 =8 mA

Stage 2, 7.5 Vdc, IDQ2 =24 mA

RJC

32

9.4

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

1A, passes 250 V

Machine Model (per EIA/JESD22--A115)

A

Charge Device Model (per JESD22--C101)

II, passes 200 V

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

3

260

C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.nxp.com/RF/calculators.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

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