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HDSP-50XB Datasheet(PDF) 3 Page - AVAGO TECHNOLOGIES LIMITED |
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HDSP-50XB Datasheet(HTML) 3 Page - AVAGO TECHNOLOGIES LIMITED |
3 / 4 page 3 Absolute Maximum Ratings at TA=25°C HDSP-501B Parameter Symbol HDSP-503B Units Power Dissipated per Segment or DP PD 135 mW Peak Forward Current per Segment or DP IPEAK 70 mA (1/10 Duty Cycle, 0.1 ms Pulse Width) DC Forward Current per Segment or DP[1] IF 30[1] mA Reverse Voltage per Segment or DP VR 5V Operating Temperature TO –20 to +80 °C Storage Temperature TS –30 to +85 °C Wave Soldering Conditions Temperature 250 °C (1.6 mm [0.063 in.] below Body) Time 3 s Note: 1. Derate above 25 °C at 0.33 mA/°C. Devices Test HDSP- Parameter Symbol Min. Typ. Max. Units Conditions Luminous Intensity/Segment Iv 2.02 3.40 mcd IF = 10 mA (Segment Average)[1,2] 501B Forward Voltage/Segment or DP VF 3.80 4.50 V IF = 20 mA 503B Peak Wavelength λ PEAK 428 nm Dominant Wavelength[3] λ d 466 nm Reverse Current/Segment or DP[4] IR 100 µAV R = 5 V Bin Name Min.[2] Max.[2] H 2020 2630 I 2630 3420 J 3420 4200 K 4200 5040 Notes: 1. Bin categories are established for classification of products. Products may not be available in all bin categories. 2. Tolerance for each bin limit is ± 10%. Intensity Bin Limits[1] ( µcd at 10 mA) Notes: 1. Case temperature of the device immediately prior to the intensity measurement is 25 °C. 2. The digits are categorized for luminous intensity. The intensity category is designated by a letter on the side of the package. 3. The dominant wavelength, λd, is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device. 4. Typical specification for reference only. Do not exceed absolute maximum ratings. Optical/Electrical Characteristics at TA=25°C |
Similar Part No. - HDSP-50XB |
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Similar Description - HDSP-50XB |
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