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NTE6410 Datasheet(PDF) 1 Page - NTE Electronics

Part # NTE6410
Description  Unijunction Transistor (UJT)
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Manufacturer  NTE [NTE Electronics]
Direct Link  http://www.nteinc.com
Logo NTE - NTE Electronics

NTE6410 Datasheet(HTML) 1 Page - NTE Electronics

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NTE6410
Unijunction Transistor (UJT)
Description:
The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and
timing circuits, sensing circuits and thyristor trigger circuits.
Absolute Maximum Ratings: (TA = +25°C unless other specified)
RMS Power Dissipation, PD
300mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°C
3.0mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Emitter Current, IE
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak–Pulse Emitter Current (Note 1), IE
1.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Reverse Voltage, VB2E
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Interbase Voltage (Note 2), VB2B1
35V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ
–65
° to +125°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–65
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Duty cycle
≤ 1%, PRR = 10 PPS
Note 2. Based upon power dissipation at TA = +25°C
Electrical Characteristics: (TA = +25°C unless other specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Intrinsic Standoff Ratio
η
VB2B1 = 10V, Note 3
0.70
0.85
Interbase Resistance
RBB
4.0
6.0
9.1
k
Interbase Resistance Temperature Coefficient
αRBB
0.1
0.9
%/
°C
Emitter Saturation Voltage
VBE1(sat) VB2B1 = 10V, IE = 50mA, Note 4
2.5
V
Modulated Interbase Current
IB2(Mod) VB2B1 = 10V, IE = 50mA
15
mA
Emitter Reverse Current
IEB2O
VB2E = 30V, IB1 = 0
0.005
1.0
µA
Peak–Point Emitter Current
IP
VB2B1 = 25V
1.0
5.0
µA
Valley–Point Current
IV
VB2B1 = 20V, RB2 = 100Ω, Note 4
4.0
7.0
mA
Base–One Peak Pulse Voltage
VOB1
5.0
8.0
V
Note 3. Intrinsic standoff ratio, is defined in terms of peak–point voltage, VP, by means of the equa-
tion: VP = η VB2B1 VF, where VF is approximately 0.49 volts at +25°C @ IF = 10µA and de-
creases with temperature at approximately 2.5mV/
°C. Components R1, C1, and the UJT
form a relaxation oscillator, the remaining circuitry serves as a peak–voltage detector. The
forward drop of Diode D1 compensates for VF. To use, the “call” button is pushed, and R3
is adjusted to make the current meter, M1, read full scale. When the “call” button is released,
the value of
η is read directly from the meter, if full scale on the meter reads 1.0.
Note 4. Use pulse techniques: PW
∼ 300µs, duty cycle ≤ 2.0% to avoid internal heating, which may
result in erroneous readings.


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