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NTE6410 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE6410 Datasheet(HTML) 1 Page - NTE Electronics |
1 / 2 page ![]() NTE6410 Unijunction Transistor (UJT) Description: The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Absolute Maximum Ratings: (TA = +25°C unless other specified) RMS Power Dissipation, PD 300mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate Above 25 °C 3.0mW/ °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RMS Emitter Current, IE 50mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak–Pulse Emitter Current (Note 1), IE 1.5A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter Reverse Voltage, VB2E 30V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Interbase Voltage (Note 2), VB2B1 35V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature Range, TJ –65 ° to +125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –65 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Note 1. Duty cycle ≤ 1%, PRR = 10 PPS Note 2. Based upon power dissipation at TA = +25°C Electrical Characteristics: (TA = +25°C unless other specified) Parameter Symbol Test Conditions Min Typ Max Unit Intrinsic Standoff Ratio η VB2B1 = 10V, Note 3 0.70 – 0.85 Interbase Resistance RBB 4.0 6.0 9.1 k Ω Interbase Resistance Temperature Coefficient αRBB 0.1 – 0.9 %/ °C Emitter Saturation Voltage VBE1(sat) VB2B1 = 10V, IE = 50mA, Note 4 – 2.5 – V Modulated Interbase Current IB2(Mod) VB2B1 = 10V, IE = 50mA – 15 – mA Emitter Reverse Current IEB2O VB2E = 30V, IB1 = 0 – 0.005 1.0 µA Peak–Point Emitter Current IP VB2B1 = 25V – 1.0 5.0 µA Valley–Point Current IV VB2B1 = 20V, RB2 = 100Ω, Note 4 4.0 7.0 – mA Base–One Peak Pulse Voltage VOB1 5.0 8.0 – V Note 3. Intrinsic standoff ratio, is defined in terms of peak–point voltage, VP, by means of the equa- tion: VP = η VB2B1 VF, where VF is approximately 0.49 volts at +25°C @ IF = 10µA and de- creases with temperature at approximately 2.5mV/ °C. Components R1, C1, and the UJT form a relaxation oscillator, the remaining circuitry serves as a peak–voltage detector. The forward drop of Diode D1 compensates for VF. To use, the “call” button is pushed, and R3 is adjusted to make the current meter, M1, read full scale. When the “call” button is released, the value of η is read directly from the meter, if full scale on the meter reads 1.0. Note 4. Use pulse techniques: PW ∼ 300µs, duty cycle ≤ 2.0% to avoid internal heating, which may result in erroneous readings. |
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