NTE6402 datasheet(2/2 Pages) NTE

Part #	NTE6402

Description	Programmable Unijunction Transistor (PUT)

PDF	2 Pages

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Manufacturer	NTE [NTE Electronics]

Direct Link	http://www.nteinc.com

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2 / 2 page

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Peak Current

IP

VS = 10V, RG = 1MΩ

–

2

µA

VS = 10V, RG = 10kΩ

–

5

µA

Offset Voltage

VT

VS = 10V, RG = 1MΩ

0.2

–

1.6

V

VS = 10V, RG = 10kΩ

0.2

–

0.6

V

Valley Current

IV

VS = 10V, RG = 1MΩ

–

50

µA

VS = 10V, RG = 10kΩ

70

–

µA

VS = 10V, RG = 200Ω

1.5

–

mA

Anode Gate–Anode Leakage Current

IGAO

VS = 40V, TA = +25°C

–

10

nA

VS = 40V, TA = +75°C

–

100

nA

Gate–Cathode Leakage Current

IGKS

VS = 40V, Anode–Cathode Short

–

100

nA

Forward Voltage

VF

IF = 50mA

–

1.5

V

Pulse Output Voltage

VO

6

–

V

Pulse Voltage Rate of Rise

tr

–

80

ns

A G K

.190 (4.82) Min

.018 (0.45) Dia Max

.245

(6.23)

Max

.500

(12.7)

Min

.100 (2.54)

.200 (5.08) Max

.065

(1.65)

.140 (3.55) Max

.135 (3.45) Min

Seating

Plane

.021 (.445)

Dia Max

.210

(5.33)

Max

.500

(12.7)

Min

.050 (1.27)

.165 (4.2) Max

.105 (2.67) Max

.100 (2.54)

.105 (2.67) Max

.205 (5.2) Max

A G K

TO92

TO98

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