EMX1FHA datasheet(2/8 Pages) ROHM

Part #	EMX1FHA

Description	General purpose transistor (dual transistors)

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Manufacturer	ROHM [Rohm]

Direct Link	http://www.rohm.com

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EMX1 FHA

Datasheet

l

lAbsolute maximum ratings (Ta = 25°C) <It is the same ratings for the Tr1 and Tr2>

Parameter

Symbol

Values

Unit

Collector-base voltage

VCBO

60

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

7

V

Collector current

IC

150

mA

Power dissipation

total

PD*1

150

mW

element

PD

120

mW

Junction temperature

Tj

150

℃

Range of storage temperature

Tstg

-55 to +150

℃

l

lElectrical characteristics (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Collector-base breakdown

voltage

BVCBO

IC = 50μA

60

-

V

Collector-emitter breakdown

voltage

BVCEO

IC = 1mA

50

-

V

Emitter-base breakdown voltage

BVEBO

IE = 50μA

7

-

V

Collector cut-off current

ICBO

VCB = 60V

-

100

nA

Emitter cut-off current

IEBO

VEB = 7V

-

100

nA

Collector-emitter saturation voltage

VCE(sat)

IC = 50mA, IB = 5mA

-

400

mV

DC current gain

hFE

VCE = 6V, IC = 1mA

120

-

560

-

Transition frequency

fT

VCE = 12V, IE = -2mA,

f = 100MHz

-

180

-

MHz

Output capacitance

Cob

VCB = 12V, IE = 0A,

f = 1MHz

-

2.0

3.5

pF

*1 Each terminal mounted on a reference land.

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20160909 - Rev.001

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