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GaAlAs Infrared Emitter

OPE5194WK

The OPE5194WK is GaAlAs infrared emitting diode

DIMENSIONS (Unit : mm)

that is designed for high radiant intensity and

low forward voltage .This device is optimized for efficiency

at emission wavelength 940nm and has a high radiant

efficiency over a wide range of forward current.

This device is packaged T1-3/4 plastic package

and has narrow beam angle with lensed package

and cup frame.

FEATURES

• High-output power

• Narrow beam angle

• Available for pulse operating

APPLICATIONS

• Optical emitters

• Optical switches

• Smoke sensors

• IR remote control

• IR sound transmission

STORAGE

• Condition : 5°C~35°C,R.H.60%

• Terms : within 3 months from production date

• Remark : Once the package is opened, the products should be used within a day.

Otherwise, it should be keeping in a damp proof box with desiccants.

* Please take proper steps in order to secure reliability and safety in required conditions and environments

for this device.

MAXIMUM RATINGS

(Ta=25

°C )

Item

Symbol

Rating

Unit

Power Dissipation

150

mW

Forward current

100

mA

Pulse forward current

*1

1.0

A

Reverse voltage

5.0

V

Operating temp.

Topr.

-25~ +85

°C

Soldering temp.

*2

Tsol.

260.

°C

ELECTRO-OPTICALCHARACTERISTICS

(Ta=25

°C)

Item

Symbol

Conditions

Min.

Typ.

Max.

Unit

Forward voltage

1.4

1.7

V

Reverse current

10

µA

Capacitance

Ct

f = 1MHz

20

pF

Radiant intensity

Ie

100

mW/㏛

Peak emission wavelength

λ

p

940

nm

Spectral bandwidth 50%

Δλ

45

nm

Half angle

Δθ

±10

deg.

2-□0.5

① ②

2.5

①

Anode

②

Cathode

Tolerance :

±0.2mm