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HMC1086 Datasheet(PDF) 1 Page - Analog Devices |
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HMC1086 Datasheet(HTML) 1 Page - Analog Devices |
1 / 9 page ![]() 1 HMC1086 v06.0318 25 WATT GAN MMIC POWER AMPLIFIER, 2 - 6 GHz For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Functional Diagram Features Typical Applications General Description High Psat: +44.5 dBm Power Gain at Psat: 14 dB High Output IP3: +48 dBm Small Signal Gain: 22 dB Supply Voltage: +28 V @ 1.1 A 50 Ohm Matched Input/Output Die Size: 3.4 x 4 x 0.1 mm2 The HMC1086 is a 25W Gallium Nitride (GaN) Power Amplifier MMIC which operates between 2 and 6 GHz. The amplifier typically provides 22 dB of small signal gain, +44.5 dBm of saturated output power, and +48 dBm output IP3 at +33 dBm output power per tone. The HMC1086 draws 1100 mA quiescent current from a +28V DC supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCM). All electrical performance data was acquired with die eutectically attached to 1.02 mm (40 mil) thick CuMo carrier with multiple 1.0 mil diameter ball bonds connecting the die to 50 Ohm transmission lines on alumina. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 2 - 3.5 3.5 - 5 5 - 6 GHz Small Signal Gain 21 22 22 23 21 22 dB Gain Flatness ±0.5 ±0.5 ±0.5 dB Gain Variation Over Temperature 0.012 0.016 0.024 dB/ °C Input Return Loss 10 15 15 dB Output Return Loss 8 8 8 dB Power Gain (Pin @ 25 dBm) 18 18 18 dB Saturated Output Power (Psat) 44.5 45 44.5 dBm Output Third Order Intercept (IP3) [2] 48 48 48 dBm Power Added Efficiency 42 37 34 % Quiescent Supply Current (Idd @ Vdd = +28V) 1100 1100 1100 mA [1] Assumes eutectic attach of die to a 40 mil CuMo carrier, and 25 °C is maintained at the back of the carrier. [2] Measurement taken at Pout / tone = +33 dBm. The HMC1086 is ideal for: • Test Instrumentation • General Communications • Radar Electrical Specifications, T A = +25 °C, Vdd = VD1 = VD2 = +28V, Idd = 1100 mA [1] |
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