For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

6

HMC1086

v06.0318

25 WATT GAN MMIC POWER AMPLIFIER,

2 - 6 GHz

Outline Drawing

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM]

2. DIE THICKNESS IS .004”

3. TYPICAL BOND PAD IS 0.0026” [0.066] SQUARE

4. BACKSIDE METALLIZATION: GOLD

5. BOND PAD METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND.

7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

8. OVERALL DIE SIZE ± .002

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Drain Bias Voltage (Vdd)

+32V

Gate Bias Voltage (Vgg)

-8 V to 0V

Maximum Forward Gate Current

11 mA

Maximum RF Input Power (RFIN)

33 dBm

6:1

Maximum Junction Temperature (Tj)

225 °C

Maximum Pdiss (T = 85 °C)

(Derate 455 mW/°C above 85 °C)

63.6W

2.2°C/W

Operating Temperature

-40 °C to +85°C

Storage Temperature

-55 °C to 150 °C

Standard

Alternate

GP-1 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

[1] Operation outside parameter ranges above can cause permanent damage to the device.These are maximum stress ratings

only. Continuous operation of the device at these conditions is not implied.

[2] Assumes 0.5 mil AuSn die attach to a 40 mil CuMo Carrier with 85°C at the back of the carrier.

[3] Restricted by maximum power dissipation