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F3L150R07W2E3_B11 Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # F3L150R07W2E3_B11
Description  EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTC
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

F3L150R07W2E3_B11 Datasheet(HTML) 2 Page - Infineon Technologies AG

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TechnischeInformation/TechnicalInformation
F3L150R07W2E3_B11
IGBT-Module
IGBT-modules
preparedby:DK
approvedby:MB
dateofpublication:2013-11-05
revision:2.1
VorläufigeDaten
PreliminaryData
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
VCES

650
 V
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 25°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC

150
150
 A
A
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM

300
 A
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot

335
 W
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VGES

+/-20
 V
CharakteristischeWerte/CharacteristicValues
min.
typ.
max.
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 150 A, VGE = 15 V
IC = 150 A, VGE = 15 V
IC = 150 A, VGE = 15 V
VCE sat
1,45
1,60
1,70
1,90
V
V
V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 2,40 mA, VCE = VGE, Tvj = 25°C
VGEth
4,9
5,8
6,5
V
Gateladung
Gatecharge
VGE = -15 V ... +15 V
QG

1,60

µC
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
RGint

2,0

Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies

9,30

nF
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres

0,285

nF
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 650 V, VGE = 0 V, Tvj = 25°C
ICES


1,0
mA
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES


400
nA
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 150 A, VCE = 300 V
VGE = ±15 V
RGon = 3,3
td on

0,085
0,10
0,11

µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 150 A, VCE = 300 V
VGE = ±15 V
RGon = 3,3
tr

0,04
0,045
0,045

µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 150 A, VCE = 300 V
VGE = ±15 V
RGoff = 3,3
td off

0,30
0,33
0,34

µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 150 A, VCE = 300 V
VGE = ±15 V
RGoff = 3,3
tf

0,09
0,13
0,14

µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 150 A, VCE = 300 V, LS = 35 nH
VGE = ±15 V, di/dt = 2400 A/µs (Tvj = 150°C)
RGon = 3,3
Eon

1,20
1,75
1,95

mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 150 A, VCE = 300 V, LS = 35 nH
VGE = ±15 V, du/dt = 3600 V/µs (Tvj = 150°C)
RGoff = 3,3
Eoff

4,15
5,10
5,40

mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Kurzschlußverhalten
SCdata
VGE
≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
ISC

1100
750

A
A
Tvj = 25°C
Tvj = 150°C
tP
≤ 8 µs,
tP
≤ 6 µs,
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
RthJC

0,40
0,45
K/W
Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink
proIGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH

0,45
K/W
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

Tvj op
-40

150
°C


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