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F3L150R07W2E3_B11 Datasheet(PDF) 9 Page - Infineon Technologies AG |
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F3L150R07W2E3_B11 Datasheet(HTML) 9 Page - Infineon Technologies AG |
9 / 11 page 9 TechnischeInformation/TechnicalInformation F3L150R07W2E3_B11 IGBT-Module IGBT-modules preparedby:DK approvedby:MB dateofpublication:2013-11-05 revision:2.1 VorläufigeDaten PreliminaryData SchaltverlusteDiode,D5-D6(typisch) switchinglossesDiode,D5-D6(typical) Erec=f(IF) RGon=3.3 Ω,VCE=300V IF [A] 0 30 60 90 120 150 180 210 240 270 300 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 Erec, Tvj = 125°C Erec, Tvj = 150°C SchaltverlusteDiode,D5-D6(typisch) switchinglossesDiode,D5-D6(typical) Erec=f(RG) IF=150A,VCE=300V RG [ Ω] 0 3 6 9 12 15 18 21 24 27 30 33 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 Erec, Tvj = 125°C Erec, Tvj = 150°C TransienterWärmewiderstandDiode,D5-D6 transientthermalimpedanceDiode,D5-D6 ZthJH=f(t) t [s] 0,001 0,01 0,1 1 10 0,01 0,1 1 10 ZthJH : Diode i: ri[K/W]: τi[s]: 1 0,043 0,0005 2 0,099 0,005 3 0,366 0,05 4 0,443 0,2 NTC-Widerstand-Temperaturkennlinie(typisch) NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) TC [°C] 0 20 40 60 80 100 120 140 160 100 1000 10000 100000 Rtyp |
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