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F3L150R07W2E3_B11 Datasheet(PDF) 8 Page - Infineon Technologies AG

Part # F3L150R07W2E3_B11
Description  EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTC
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

F3L150R07W2E3_B11 Datasheet(HTML) 8 Page - Infineon Technologies AG

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TechnischeInformation/TechnicalInformation
F3L150R07W2E3_B11
IGBT-Module
IGBT-modules
preparedby:DK
approvedby:MB
dateofpublication:2013-11-05
revision:2.1
VorläufigeDaten
PreliminaryData
SchaltverlusteDiode,Wechselrichter(typisch)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=3.3
Ω,VCE=300V
IF [A]
0
30
60
90
120 150 180 210 240 270 300
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
Erec, Tvj = 125°C
Erec, Tvj = 150°C
SchaltverlusteDiode,Wechselrichter(typisch)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=150A,VCE=300V
RG [
Ω]
0
3
6
9
12
15
18
21
24
27
30
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
Erec, Tvj = 125°C
Erec, Tvj = 150°C
TransienterWärmewiderstandDiode,Wechselrichter
transientthermalimpedanceDiode,Inverter
ZthJ3=f(t)
t [s]
0,001
0,01
0,1
1
10
0,01
0,1
1
10
ZthJH : Diode
i:
ri[K/W]:
τi[s]:
1
0,049
0,0005
2
0,113
0,005
3
0,408
0,05
4
0,48
0,2
DurchlasskennliniederDiode,D5-D6(typisch)
forwardcharacteristicofDiode,D5-D6(typical)
IF=f(VF)
VF [V]
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
1,6
1,8
2,0
0
30
60
90
120
150
180
210
240
270
300
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C


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