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F3L150R07W2E3_B11 Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # F3L150R07W2E3_B11
Description  EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTC
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

F3L150R07W2E3_B11 Datasheet(HTML) 7 Page - Infineon Technologies AG

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TechnischeInformation/TechnicalInformation
F3L150R07W2E3_B11
IGBT-Module
IGBT-modules
preparedby:DK
approvedby:MB
dateofpublication:2013-11-05
revision:2.1
VorläufigeDaten
PreliminaryData
SchaltverlusteIGBT,Wechselrichter(typisch)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=150A,VCE=300V
RG [
Ω]
0
3
6
9
12
15
18
21
24
27
30
33
0
2
4
6
8
10
12
14
16
18
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
Eoff, Tvj = 150°C
TransienterWärmewiderstandIGBT,Wechselrichter
transientthermalimpedanceIGBT,Inverter
ZthJH=f(t)
t [s]
0,001
0,01
0,1
1
10
0,01
0,1
1
10
ZthJH : IGBT
i:
ri[K/W]:
τi[s]:
1
0,028
0,0005
2
0,052
0,005
3
0,269
0,05
4
0,501
0,2
SichererRückwärts-ArbeitsbereichIGBT,Wechselrichter
(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=3.3
Ω,Tvj=150°C
VCE [V]
0
100
200
300
400
500
600
700
0
30
60
90
120
150
180
210
240
270
300
330
IC, Modul
IC, Chip
DurchlasskennliniederDiode,Wechselrichter(typisch)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
VF [V]
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
1,6
1,8
2,0
0
30
60
90
120
150
180
210
240
270
300
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C


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