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74HC08D Datasheet(PDF) 6 Page - NXP Semiconductors |
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74HC08D Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 20 page 2003 Jul 25 6 Philips Semiconductors Product specification Quad 2-input AND gate 74HC08; 74HCT08 DC CHARACTERISTICS Family 74HC08 At recommended operating conditions; voltages are referenced to GND (ground=0V). SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT OTHER VCC (V) Tamb =25 °C VIH HIGH-level input voltage 2.0 1.5 1.2 − V 4.5 3.15 2.4 − V 6.0 4.2 3.2 − V VIL LOW-level input voltage 2.0 − 0.8 0.5 V 4.5 − 2.1 1.35 V 6.0 − 2.8 1.8 V VOH HIGH-level output voltage VI =VIH or VIL IO = −20 µA 2.0 1.9 2.0 − V IO = −20 µA 4.5 4.4 4.5 − V IO = −4.0 mA 4.5 3.98 4.32 − V IO = −20 µA 6.0 5.9 6.0 − V IO = −5.2 mA 6.0 5.48 5.81 − V VOL LOW-level output voltage VI =VIH or VIL IO =20 µA 2.0 − 0 0.1 V IO =20 µA 4.5 − 0 0.1 V IO = 4.0 mA 4.5 − 0.15 0.26 V IO =20 µA 6.0 − 0 0.1 V IO = 5.2 mA 6.0 − 0.16 0.26 V ILI input leakage current VI =VCC or GND 6.0 − 0.1 ±.0.1 µA IOZ 3-state output OFF current VI =VIH or VIL; VO =VCC or GND 6.0 −−±.0.5 µA ICC quiescent supply current VI =VCC or GND; IO = 0 6.0 −− 2 µA |
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