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74HC08N Datasheet(PDF) 5 Page - NXP Semiconductors |
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74HC08N Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 20 page 2003 Jul 25 5 Philips Semiconductors Product specification Quad 2-input AND gate 74HC08; 74HCT08 handbook, halfpage MNB037 A B Y Fig.5 HC logic diagram (one gate). handbook, halfpage MNA221 A B Y Fig.6 HCT logic diagram (one gate). RECOMMENDED OPERATING CONDITIONS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). Notes 1. For DIP14 packages: above 70 °C derate linearly with 12 mW/K. 2. For SO14 packages: above 70 °C derate linearly with 8 mW/K. For SSOP14 and TSSOP14 packages: above 60 °C derate linearly with 5.5 mW/K. For DHVQFN14 packages: above 60 °C derate linearly with 4.5 mW/K. SYMBOL PARAMETER CONDITIONS 74HC08 74HCT08 UNIT MIN. TYP. MAX. MIN. TYP. MAX. VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V VI input voltage 0 − VCC 0 − VCC V VO output voltage 0 − VCC 0 − VCC V Tamb ambient temperature see DC and AC characteristics per device −40 +25 +125 −40 +25 +125 °C tr,tf input rise and fall times VCC = 2.0 V −− 1000 −−− ns VCC = 4.5 V − 6.0 500 − 6.0 500 ns VCC = 6.0 V −− 400 −−− ns SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC supply voltage −0.5 +7.0 V IIK input diode current VI < −0.5 V or VI >VCC + 0.5 V −±20 mA IOK output diode current VO < −0.5 V or VO >VCC + 0.5 V −±20 mA IO output source or sink current −0.5V<VO <VCC + 0.5 V −±25 mA ICC, IGND VCC or GND current −±50 mA Tstg storage temperature −65 +150 °C Ptot power dissipation DIP14 package Tamb = −40 to +125 °C; note 1 − 750 mW other packages Tamb = −40 to +125 °C; note 2 − 500 mW |
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