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74HC08N Datasheet(PDF) 5 Page - NXP Semiconductors

Part # 74HC08N
Description  Quad 2-input AND gate
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74HC08N Datasheet(HTML) 5 Page - NXP Semiconductors

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2003 Jul 25
5
Philips Semiconductors
Product specification
Quad 2-input AND gate
74HC08; 74HCT08
handbook, halfpage
MNB037
A
B
Y
Fig.5 HC logic diagram (one gate).
handbook, halfpage
MNA221
A
B
Y
Fig.6 HCT logic diagram (one gate).
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. For DIP14 packages: above 70
°C derate linearly with 12 mW/K.
2. For SO14 packages: above 70
°C derate linearly with 8 mW/K.
For SSOP14 and TSSOP14 packages: above 60
°C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60
°C derate linearly with 4.5 mW/K.
SYMBOL
PARAMETER
CONDITIONS
74HC08
74HCT08
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
VCC
supply voltage
2.0
5.0
6.0
4.5
5.0
5.5
V
VI
input voltage
0
VCC
0
VCC
V
VO
output voltage
0
VCC
0
VCC
V
Tamb
ambient
temperature
see DC and AC
characteristics per device
−40
+25
+125
−40
+25
+125
°C
tr,tf
input rise and fall
times
VCC = 2.0 V
−−
1000
−−−
ns
VCC = 4.5 V
6.0
500
6.0
500
ns
VCC = 6.0 V
−−
400
−−−
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
−0.5
+7.0
V
IIK
input diode current
VI < −0.5 V or VI >VCC + 0.5 V
−±20
mA
IOK
output diode current
VO < −0.5 V or VO >VCC + 0.5 V
−±20
mA
IO
output source or sink current
−0.5V<VO <VCC + 0.5 V
−±25
mA
ICC, IGND
VCC or GND current
−±50
mA
Tstg
storage temperature
−65
+150
°C
Ptot
power dissipation
DIP14 package
Tamb = −40 to +125 °C; note 1
750
mW
other packages
Tamb = −40 to +125 °C; note 2
500
mW


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