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S1D2512X01-A0B0 Datasheet(PDF) 15 Page - Samsung semiconductor

Part # S1D2512X01-A0B0
Description  DEFLECTION PROCESSOR FOR MULTISYNC MONITORS
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

S1D2512X01-A0B0 Datasheet(HTML) 15 Page - Samsung semiconductor

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DEFLECTION PROCESSOR FOR MULTISYNC MONITORS
S1D2512X01
14
Side pin balance parabola amplitude function
of Vamp control (tracking between Vamp and
SPB) with max. SPB, typ. V-POS and
parallelogram inhibited (see 8, 9)
SPBtrack Sub address 05
Byte 10000000
Byte 11000000
Byte 11111111
0.5
0.9
1.4
%TH
%TH
%TH
Parallelogram adjustment capability with max.
Vamp, typ. V-POS and max. SPB (see8, 9)
ParAdj
Sub address 0E
Byte x1111111
Byte x1000000
+1.4
-1.4
%TH
%TH
Intrinsic parallelogram function of Vpos control
(tracking between V-pos and DHPC) with max.
Vamp, max. SPB and parallelogram inhibited
(see 8, 9)
A/B ratio
B/A ratio
Partrack
Sub address 06
Byte x0000000
Byte x1111111
0.52
0.52
VERTICAL MOIRE
Vertical moire (measured on VOUT) pin 23
VMOIRE
Sub address 0C
Byte 01x11111
6
mV
BREATHING COMPENSATION
DC breathing control range (see 15)
BRRANG
V18
1
12
V
Vertical output variation versus DC breathing
control (Pin 23)
BRADj
V18
≥ V
REF-V
V18 = 4V
0
-10
%
%
Table 11. Vertical Section Electrical Characteristics (Continued)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit


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