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S1D2512X01-A0B0 Datasheet(PDF) 15 Page - Samsung semiconductor |
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S1D2512X01-A0B0 Datasheet(HTML) 15 Page - Samsung semiconductor |
15 / 36 page DEFLECTION PROCESSOR FOR MULTISYNC MONITORS S1D2512X01 14 Side pin balance parabola amplitude function of Vamp control (tracking between Vamp and SPB) with max. SPB, typ. V-POS and parallelogram inhibited (see 8, 9) SPBtrack Sub address 05 Byte 10000000 Byte 11000000 Byte 11111111 0.5 0.9 1.4 %TH %TH %TH Parallelogram adjustment capability with max. Vamp, typ. V-POS and max. SPB (see8, 9) ParAdj Sub address 0E Byte x1111111 Byte x1000000 +1.4 -1.4 %TH %TH Intrinsic parallelogram function of Vpos control (tracking between V-pos and DHPC) with max. Vamp, max. SPB and parallelogram inhibited (see 8, 9) A/B ratio B/A ratio Partrack Sub address 06 Byte x0000000 Byte x1111111 0.52 0.52 VERTICAL MOIRE Vertical moire (measured on VOUT) pin 23 VMOIRE Sub address 0C Byte 01x11111 6 mV BREATHING COMPENSATION DC breathing control range (see 15) BRRANG V18 1 12 V Vertical output variation versus DC breathing control (Pin 23) BRADj V18 ≥ V REF-V V18 = 4V 0 -10 % % Table 11. Vertical Section Electrical Characteristics (Continued) Parameter Symbol Conditions Min Typ Max Unit |
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