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S1D2512X01-A0B0 Datasheet(PDF) 14 Page - Samsung semiconductor |
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S1D2512X01-A0B0 Datasheet(HTML) 14 Page - Samsung semiconductor |
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14 / 36 page  S1D2512X01 DEFLECTION PROCESSOR FOR MULTISYNC MONITORS 13 Max vertical S-correction amplitude (see 14) XOXXXXXX inhibits S-CORR X1111111 gives max S-CORR dVS Sub address 07 ∆V/Vpp at TV/4 ∆V/Vpp at 3TV/4 -4 +4 % % Vertical C-Corr amplitude XOXXXXXX inhibits C-corr Ccorr Sub address 08 ∆V/Vpp at TV/2 Byte X1000000 Byte X1100000 Byte X1111111 -3 0 3 % % % EAST/WEST FUNCTION DC output voltage with typ. Vpos, keystone and corner inhibited EWDC pin 24, see figure 2 2.5 V DC output voltage thermal drift TDEWDC see note 7 100 ppm/ C Parabola amplitude with max. Vamp, typ. V-Pos, keystone and corner inhibited EWpara Sub address 0A Byte 1111111 Byte 1100000 Byte 1000000 1.7 0.85 0 Vpp Vpp Vpp Parabola amplitude function of V-AMP control (tracking between V-AMP and E/W) with typ. Vpos, typ. EW amplitude, keystone and corner inhibited (see 8) EWtrack Sub address 05 Byte 1000000 Byte 1100000 Byte 1111111 0.30 0.55 0.85 Vpp Vpp Vpp Keystone adjustment capability with typ.Vpos, corner and E/W inhibited and max. vertical amplitude. (see 8) KeyAdj Sub address 09 Byte 1x000000 Byte 1x111111 0.65 0.65 Vpp Vpp Intrinsic keystone function of V-POS control (tracking between V-pos and EW) max. E/W and max. vertical amplitude and corner inhibited. (see 7) A/B ratio B/A ratio Key- Track Sub address 06 Byte x0000000 Byte x1111111 0.52 0.52 Corner amplitude with max. VAMP, typ. VPOS, keystone and E/W inhibit Corner Sub address 0B Byte 11111111 Byte 11000000 Byte 10000000 1.7 0 -1.7 Vpp Vpp Vpp INTERNAL HORIZONTAL DYNAMIC PHASE CONTROL FUNCTION Side pin balance parabola amplitude (Figure3) with max. Vamp, typ. V-POS and parallelogram inhibited (see 8, 9) SPBpara Sub address 0D Byte x1111111 Byte x1000000 +1.4 -1.4 %TH %TH Table 11. Vertical Section Electrical Characteristics (Continued) Parameter Symbol Conditions Min Typ Max Unit |
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