Advanced Power

N AND P-CHANNEL ENHANCEMENT

Electronics Corp.

MODE POWER MOSFET

▼ Simple Drive Requirement

100V

▼ Good Thermal Performance

150mΩ

▼ Fast Switching Performance

3

3.2A

▼ RoHS Compliant & Halogen-Free

-100V

160mΩ

Description

3

-3.2A

Symbol

Parameter

Rating

Units

N-channel

P-channel

Drain-Source Voltage

100

-100

V

Gate-Source Voltage

+20

+20

V

3

3.2

-3.2

A

2.5

-2.5

A

Pulsed Drain Current

1

10

-10

A

Total Power Dissipation

W

Storage Temperature Range

℃

Operating Junction Temperature Range

℃

Thermal Data

Symbol

Parameter

Rating

Units

N-channel

P-channel

Rthj-c

6

℃

/W

Rthj-a

35

35

℃

/W

1

AP10C150MT

Halogen-Free Product

3.57

-55 to 150

-55 to 150

3

Maximum Thermal Resistance, Junction-ambient

3

201707071

6

Maximum Thermal Resistance, Junction-case

AP10C150 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

The PMPAK

application using standard infrared reflow technique with the

backside heat sink to achieve the good thermal performance.

S1

G1

S2

G2

PMPAK

®

5x6

D1

D1

D2

D2

S1 G1 S2 G2

D1 D1 D2 D2

.