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10C150 Datasheet(PDF) 7 Page - Advanced Power Electronics Corp.

Part # 10C150
Description  N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

10C150 Datasheet(HTML) 7 Page - Advanced Power Electronics Corp.

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AP10C150MT
P-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Drain Current v.s. Ambient Temperature
7
0
2
4
6
8
10
12
010
20
30
40
Q G , Total Gate Charge (nC)
I D = -2A
V DS = -50V
0
800
1600
2400
3200
1
21
41
61
81
101
121
-V DS , Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
100us
1ms
10ms
100ms
1s
DC
T A =25
o C
Single
Pulse
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
0.02
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 85℃/W
t
T
0.01
Operation in this area
limited by RDS(ON)
0
1
2
3
4
5
25
50
75
100
125
150
T A , Ambient Temperature (
o C )
0
4
8
12
16
20
0123
456
-V GS , Gate-to-Source Voltage (V)
T j =150
o C
T j =25
o C
V DS = -10V
.


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