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10C150 Datasheet(PDF) 5 Page - Advanced Power Electronics Corp.

Part # 10C150
Description  N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

10C150 Datasheet(HTML) 5 Page - Advanced Power Electronics Corp.

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AP10C150MT
N-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Drain Current v.s. Ambient Temperature
5
0
2
4
6
8
10
12
0
4
8
12
16
20
Q G , Total Gate Charge (nC)
I D =2 A
V DS =50
V
0
200
400
600
800
1000
1200
1
21
41
61
81
101
121
V DS , Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
100us
1ms
10ms
100ms
1s
DC
T A =25
o C
Single Pulse
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
0.02
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 85℃/W
t
T
0.01
Operation in this
area limited by
RDS(ON)
0
4
8
12
16
01
23
45
6
V GS , Gate-to-Source Voltage (V)
T j =150
o C
T j =25
o C
V DS =10V
0
1
2
3
4
5
25
50
75
100
125
150
T A , Ambient Temperature (
o C )
.


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