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CY7C1441KV25 Datasheet(PDF) 20 Page - Cypress Semiconductor

Part # CY7C1441KV25
Description  36-Mbit (1M36) Flow-Through SRAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1441KV25 Datasheet(HTML) 20 Page - Cypress Semiconductor

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Document Number: 001-94722 Rev. *E
Page 20 of 29
CY7C1441KV25
Switching Characteristics
Over the Operating Range
Parameter [17, 18]
Description
-133
Unit
Min
Max
tPOWER
VDD(typical) to the first access [19]
1
ms
Clock
tCYC
Clock cycle time
7.5
ns
tCH
Clock HIGH
2.5
ns
tCL
Clock LOW
2.5
ns
Output Times
tCDV
Data output valid after CLK rise
6.5
ns
tDOH
Data output hold after CLK rise
2.5
ns
tCLZ
Clock to low Z [20, 21, 22]
2.5
ns
tCHZ
Clock to high Z [20, 21, 22]
3.8
ns
tOEV
OE LOW to output valid
3.0
ns
tOELZ
OE LOW to output low Z [20, 21, 22]
0
ns
tOEHZ
OE HIGH to output high Z [20, 21, 22]
3.0
ns
Setup Times
tAS
Address setup before CLK rise
1.5
ns
tADS
ADSP, ADSC setup before CLK rise
1.5
ns
tADVS
ADV setup before CLK rise
1.5
ns
tWES
GW, BWE, BWX setup before CLK rise
1.5
ns
tDS
Data input setup before CLK rise
1.5
ns
tCES
Chip enable setup
1.5
ns
Hold Times
tAH
Address hold after CLK rise
0.5
ns
tADH
ADSP, ADSC hold after CLK rise
0.5
ns
tWEH
GW, BWE, BWX hold after CLK rise
0.5
ns
tADVH
ADV hold after CLK rise
0.5
ns
tDH
Data input hold after CLK rise
0.5
ns
tCEH
Chip enable hold after CLK rise
0.5
ns
Notes
17. Timing reference level is 1.25 V when VDDQ = 2.5 V and 0.9 V.
18. Test conditions shown in (a) of Figure 3 on page 19 unless otherwise noted.
19. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially, before a read or write operation can
be initiated.
20. tCHZ, tCLZ, tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of Figure 3 on page 19. Transition is measured ±200 mV from steady-state voltage.
21. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data
bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve
High Z prior to Low Z under the same system conditions.
22. This parameter is sampled and not 100% tested.


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