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CY7C1440KV33 Datasheet(PDF) 1 Page - Cypress Semiconductor |
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CY7C1440KV33 Datasheet(HTML) 1 Page - Cypress Semiconductor |
1 / 33 page ![]() CY7C1440KV33 CY7C1442KV33 CY7C1440KVE33 36-Mbit (1M × 36/2M × 18) Pipelined Sync SRAM (With ECC) Cypress Semiconductor Corporation • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 001-66676 Rev. *G Revised July 5, 2016 36-Mbit (1M × 36/2M × 18) Pipelined Sync SRAM (With ECC) Features ■ Supports bus operation up to 250 MHz ■ Available speed grades are 250 MHz and 167 MHz ■ Registered inputs and outputs for pipelined operation ■ 3.3 V core power supply ■ 2.5 V or 3.3 V I/O power supply ■ Fast clock-to-output time ❐ 2.5 ns (for 250 MHz device) ■ Provide high-performance 3-1-1-1 access rate ■ User-selectable burst counter supporting interleaved or linear burst sequences ■ Separate processor and controller address strobes ■ Synchronous self-timed writes ■ Asynchronous output enable ■ Single cycle chip deselect ■ CY7C1440KV33, CY7C1442KV33 and CY7C1440KVE33 are available in Pb-free 100-pin TQFP, and Pb-free and non Pb-free 165-ball FBGA packages. ■ IEEE 1149.1 JTAG-compatible boundary scan ■ “ZZ” sleep mode option ■ On-Chip error correction code (ECC) to reduce soft error rate (SER) Functional Description The CY7C1440KV33/CY7C1442KV33/CY7C1440KVE33 SRAM integrate 1M × 36/2M × 18/1M × 36 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered clock input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining chip enable (CE1), depth-expansion chip enables (CE2 and CE3), burst control inputs (ADSC, ADSP, and ADV), write enables (BWX and BWE), and global write (GW). Asynchronous inputs include the output enable (OE) and the ZZ pin. Addresses and chip enables are registered at rising edge of clock when either address strobe processor (ADSP) or address strobe controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the advance pin (ADV). Address, data inputs, and write controls are registered on-chip to initiate a self-timed write cycle. This part supports byte write operations (see pin descriptions and truth table for further details). Write cycles can be one, two or four bytes wide as controlled by the byte write control inputs. GW when active LOW causes all bytes to be written. The CY7C1440KV33/CY7C1442KV33/CY7C1440KVE33 operate from a +3.3 V core power supply while all outputs may operate with either a +2.5 V or +3.3 V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible. Selection Guide Description 250 MHz 167 MHz Unit Maximum access time 2.5 3.4 ns Maximum operating current × 18 220 Not Offered mA × 36 240 190 |
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