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CY7C1440KV25 Datasheet(PDF) 6 Page - Cypress Semiconductor

Part # CY7C1440KV25
Description  36-Mbit (1M36) Pipelined Sync SRAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1440KV25 Datasheet(HTML) 6 Page - Cypress Semiconductor

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CY7C1440KV25
Document Number: 001-94719 Rev. *D
Page 6 of 30
Functional Overview
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock. Maximum
access delay from the clock rise (tCO) is 2.5 ns (250-MHz
device).
The CY7C1440KV25 supports secondary cache in systems
utilizing either a linear or interleaved burst sequence. The
interleaved burst order supports Pentium processors. The burst
order is user selectable, and is determined by sampling the
MODE input. Accesses can be initiated with either the Processor
Address Strobe (ADSP) or the Controller Address Strobe
(ADSC). Address advancement through the burst sequence is
controlled by the ADV input. A two-bit on-chip wraparound burst
counter captures the first address in a burst sequence and
automatically increments the address for the rest of the burst
access.
Byte Write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BWX) inputs. A Global Write
Enable (GW) overrides all Byte Write inputs and writes data to
all four bytes. All writes are simplified with on-chip synchronous
self-timed Write circuitry.
Three synchronous Chip Selects (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tristate control. ADSP is ignored if CE1 is
HIGH.
Single Read Accesses
This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2)
CE1, CE2, CE3 are all asserted active, and (3) the Write signals
(GW, BWE) are all deserted HIGH. ADSP is ignored if CE1 is
HIGH. The address presented to the address inputs (A) is stored
into the address advancement logic and the Address Register
while being presented to the memory array. The corresponding
data is allowed to propagate to the input of the Output Registers.
At the rising edge of the next clock the data is allowed to
propagate through the output register and onto the data bus
within 2.5 ns (250-MHz device) if OE is active LOW. The only
exception occurs when the SRAM is emerging from a deselected
state to a selected state, its outputs are always tristated during
the first cycle of the access. After the first cycle of the access,
the outputs are controlled by the OE signal. Consecutive single
Read cycles are supported. Once the SRAM is deselected at
clock rise by the chip select and either ADSP or ADSC signals,
its output will tristate immediately.
Single Write Accesses Initiated by ADSP
This access is initiated when both of the following conditions are
satisfied at clock rise: (1) ADSP is asserted LOW, and (2) CE1,
CE2, CE3 are all asserted active. The address presented to A is
loaded into the address register and the address advancement
logic while being delivered to the memory array. The Write
signals (GW, BWE, and BWX) and ADV inputs are ignored during
this first cycle.
ADSP-triggered Write accesses require two clock cycles to
complete. If GW is asserted LOW on the second clock rise, the
data presented to the DQs inputs is written into the
corresponding address location in the memory array. If GW is
HIGH, then the Write operation is controlled by BWE and BWX
signals.
The CY7C1440KV25 provides Byte Write capability that is
described in the Write Cycle Descriptions table. Asserting the
Byte Write Enable input (BWE) with the selected Byte Write
(BWX) input, will selectively write to only the desired bytes. Bytes
not selected during a Byte Write operation will remain unaltered.
A synchronous self-timed Write mechanism has been provided
to simplify the Write operations.
Because CY7C1440KV25 is a common I/O device, the Output
Enable (OE) must be deasserted HIGH before presenting data
to the DQs inputs. Doing so will tristate the output drivers. As a
safety precaution, DQs are automatically tristated whenever a
Write cycle is detected, regardless of the state of OE.
MODE
Input-Static
Selects Burst Order. When tied to GND selects linear burst sequence. When tied to VDD
or left floating selects interleaved burst sequence. This is a strap pin and should remain
static during device operation. Mode Pin has an internal pull-up.
TDO
JTAG serial output
Synchronous
Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the
JTAG feature is not being utilized, this pin should be disconnected.
TDI
JTAG serial input
Synchronous
Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature
is not being utilized, this pin can be disconnected or connected to VDD.
TMS
JTAG serial input
Synchronous
Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature
is not being utilized, this pin can be disconnected or connected to VDD.
TCK
JTAG-Clock
Clock input to the JTAG circuitry. If the JTAG feature is not being utilized, this pin must
be connected to VSS.
NC
No Connects. Not internally connected to the die
NC/72M,NC/144M,
NC/288M, NC/576,
NC/1G
No Connects. Not internally connected to the die. 72M, 144M, 288M, 576M and 1G are
address expansion pins are not internally connected to the die.
Pin Definitions (continued)
Name
I/O
Description


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