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IDT70V25 Datasheet(PDF) 9 Page - Integrated Device Technology |
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IDT70V25 Datasheet(HTML) 9 Page - Integrated Device Technology |
9 / 22 page 6.42 IDT70V25S/L High-Speed 8K x 16 Dual-Port Static RAM Industrial and Commercial Temperature Ranges 9 Waveform of Read Cycles(5) NOTES: 1. Timing depends on which signal is asserted last, OE, CE, LB, or UB. 2. Timing depends on which signal is de-asserted first, CE, OE, LB, or UB. 3. tBDD delay is required only in case where opposite port is completing a write operation to the same address location for simultaneous read operations BUSY has no relation to valid output data. 4. Start of valid data depends on which timing becomes effective last tABE , tAOE, tACE, tAA or tBDD. 5. SEM = VIH. tRC R/ W CE ADDR tAA OE UB, LB 2944 drw 07 (4) tACE (4) tAOE (4) tABE (4) (1) tLZ tOH (2) tHZ (3,4) tBDD DATAOUT BUSYOUT VALID DATA (4) |
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