© Semiconductor Components Industries, LLC, 2005

February, 2005 − Rev. 3

1

Publication Order Number:

BCW65ALT1/D

BCW65ALT1, BCW65CLT1

General Purpose Transistor

NPN Silicon

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

32

Vdc

Collector − Base Voltage

60

Vdc

Emitter − Base Voltage

5.0

Vdc

Collector Current − Continuous

800

mAdc

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

− 55 to +150

°C

1. FR− 5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in 99.5% alumina.

SOT−23

CASE 318

STYLE 6

http://onsemi.com

EA = Specific Device Code (BCW65ALT1)

EC = Specific Device Code (BCW65CLT1)

M = Date Code

MARKING DIAGRAM

1

2

3

Device

Package

ORDERING INFORMATION

BCW65ALT1

SOT−23

3000 / Tape & Reel

BCW65ALT1G

SOT−23

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Ex M

3000 / Tape & Reel

COLLECTOR

3

1

BASE

2

EMITTER

BCW65CLT1

SOT−23

3000 / Tape & Reel