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NCV887001D1R2G Datasheet(PDF) 4 Page - ON Semiconductor |
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NCV887001D1R2G Datasheet(HTML) 4 Page - ON Semiconductor |
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4 / 16 page  NCV8870 www.onsemi.com 4 ELECTRICAL CHARACTERISTICS (continued) (−40 °C<TJ < 150°C, 3.2 V < VIN < 40 V, unless otherwise specified) Min/Max values are guaranteed by test, design or statistical correlation. Characteristic Unit Max Typ Min Conditions Symbol ENABLE/SYNCHRONIZATION EN/SYNC Pull-down Current IEN/SYNC VEN/SYNC = 5 V − 5.0 10 mA EN/SYNC Input High Voltage Vs,ih VIN > VUVLO 2.0 − 5.0 V EN/SYNC Input Low Voltage Vs,il 0 − 800 mV EN/SYNC Time-out Ratio %ten From SYNC falling edge, to oscillator con- trol (EN high) or shutdown (EN low), Per- cent of typical switching period − − 350 % SYNC Minimum Frequency Ratio %fsync,min Percent of fs − − 80 % SYNC Maximum Frequency fsync,max 1.1 − − MHz Synchronization Delay ts,dly From SYNC falling edge to GDRV falling edge under open loop conditions − 50 100 ns Synchronization Duty Cycle Dsync 25 − 75 % CURRENT SENSE AMPLIFIER Low-frequency Gain Acsa Input-to-output gain at dc, ISNS ≤ 1 V 0.9 1.0 1.1 V/V Bandwidth BWcsa Gain of Acsa − 3 dB 2.5 − − MHz ISNS Input Bias Current Isns,bias Out of ISNS pin − 30 50 mA Current Limit Threshold Voltage Vcl Voltage on ISNS pin NCV887000 NCV887001 360 360 400 400 440 440 mV Current Limit, Response Time tcl CL tripped until GDRV falling edge, VISNS = Vcl(typ) + 60 mV − 80 125 ns Overcurrent Protection, Threshold Voltage %Vocp Percent of Vcl 125 150 175 % Overcurrent Protection, Response Time tocp From overcurrent event, Until switching stops, VISNS = VOCP + 40 mV − 80 125 ns VOLTAGE ERROR OPERATIONAL TRANSCONDUCTANCE AMPLIFIER Transconductance gm,vea VFB – Vref = ±20 mV 0.8 1.2 1.63 mS VEA Output Resistance Ro,vea 2.0 − − M W VFB Input Bias Current Ivfb,bias Current out of VFB pin − 0.5 2.0 mA Reference Voltage Vref 1.176 1.200 1.224 V VEA Maximum Output Voltage Vc,max 2.5 − − V VEA Minimum Output Voltage Vc,min − − 0.3 V VEA Sourcing Current Isrc,vea VEA output current, Vc = 2.0 V 80 100 − mA VEA Sinking Current Isnk,vea VEA output current, Vc = 0.7 V 80 100 − mA GATE DRIVER Sourcing Current Isrc VDRV ≥ 6 V, VDRV − VGDRV = 2 V NCV887000 NCV887001 600 600 800 800 − − mA Sinking Current Isink VGDRV ≥ 2 V NCV887000 NCV887001 500 500 600 600 − − mA Driving Voltage Dropout Vdrv,do VIN − VDRV, IvDRV = 10 mA − 0.2 0.35 V Driving Voltage Source Current Idrv VIN − VDRV = 1 V 10 15 − mA Backdrive Diode Voltage Drop Vd,bd VDRV − VIN, Id,bd = 5 mA − − 0.7 V Driving Voltage VDRV IVDRV = 0.1 − 25 mA NCV887000 NCV887001 10 10 10.5 10.5 11 11 V |
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