U5ZA27(Z),U5ZA27C

2001-07-11

1

TOSHIBA ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE

U5ZA27(Z),U5ZA27C

BEST SUITED FOR OVERVOLTAGE PROTECTION OF

ELECTRONICSYSTEM :

ELECTRONIC SYSTEM FOR USE IN AUTOMOBILES

ELECTRONIC SYSTEM FOR COMMERCIAL USE

ELECTRONIC SYSTEM FOR INDUSTRIAL USE

FOR COMMUNICATIONS, CONTROLS, MEASURING

INSTRUMENTS, ETC.

l High surge power withstanding capabilities that absorb load dump surge.

l Excellent surge responsibility for steep surge absorption.

l Surface mount type is available for easy applications. Axial lead type is

also available.

l Corresponds to taping packages.

CHARACTERISTIC

SYMBOL

RATINGS

UNIT

Allowable power dissipation (Note 1)

P

5

W

Non-repetitive peak reverse surge

current

(See Fig.1 for the exponents.)

62

A

Junction temperature

−40~150

°C

Storage temperature

−40~150

°C

Zener voltage

Operating resistance

Temperature

coefficient

Forward voltage

Reverse current

Type No.

Min

Typ.

Max

Max

Typ.

Max

Max

Max

U5ZA27(Z) / C

24.0

27

30.0

30

23

36

1.2

10

JEDEC

―

JEITA

―

TOSHIBA

3−11J2A

Weight: 2.5 g

Unit: mm

Fig.1